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VS-40MT120PHAPbF

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VS-40MT120PHAPbF Image

The VS-40MT120PHAPbF from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.24 V, DC Collector Current 40 A, DC Forward Current 21 to 160 A, Junction Temperature -40 to 150 Degree C. More details for VS-40MT120PHAPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-40MT120PHAPbF
  • Manufacturer
    Vishay
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.24 V
  • DC Collector Current
    40 A
  • DC Forward Current
    21 to 160 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    122 to 305 W
  • Package
    MTP
  • Package Type
    Module
  • Applications
    Optimized for welding, UPS, SMPS
  • RoHS Compliant
    Yes

Technical Documents
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