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VS-GT200TP065U

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VS-GT200TP065U Image

The VS-GT200TP065U from Vishay is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 V, DC Collector Current 132 A, DC Forward Current 103 to 138 A, Junction Temperature -40 to 175 Degree C. More details for VS-GT200TP065U can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT200TP065U
  • Manufacturer
    Vishay
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 V
  • DC Collector Current
    132 A
  • DC Forward Current
    103 to 138 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    271 to 429 W
  • Package
    INT-A-PAK
  • Package Type
    Chassis Mount
  • Applications
    UPS, welding
  • RoHS Compliant
    Yes

Technical Documents
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