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MG100P12E2

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The MG100P12E2 from Yangjie Electronic Technology is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.25 V, DC Collector Current 100 A, Peak Collector Current 200 A, Junction Temperature -40 to 150 Degree C. More details for MG100P12E2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MG100P12E2
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.25 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    555 W
  • Package Type
    Chassis Mount
  • Industry
    Commercial, Industrial
  • Applications
    Motor Drivers, AC and DC servo drive amplifier, UPS (Uninterruptible Power Supplies)
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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