1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Yangjie Electronic Technology
  6. MG10P12E1

MG10P12E1

Download Datasheet Request Quote

Note : Your request will be directed to Yangjie Electronic Technology.

The MG10P12E1 from Yangjie Electronic Technology is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.5 V, DC Collector Current 10 A, Peak Collector Current 20 A, Junction Temperature -40 to 150 Degree C. More details for MG10P12E1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MG10P12E1
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.5 V
  • DC Collector Current
    10 A
  • Peak Collector Current
    20 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    120 W
  • Package Type
    Chassis Mount
  • Industry
    Commercial, Industrial
  • Applications
    Motor Drivers, AC and DC servo drive amplifier, UPS (Uninterruptible Power Supplies)
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products