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2N5115E3

Junction Field Effect Transistor (JFET) by Microchip Technology (17 more products)
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2N5115E3 Image

The 2N5115E3 from Microchip Technology is a P-Channel Junction Field Effect Transistor. It has a gate-source voltage of 6 V and a drain-source on-resistance of 100 ohms. This MIL-PRF-19500-qualified junction field effect transistor (JFET) has a power dissipation of less than 0.5 W. It is military-screened to JANTXV standard equivalent for high-reliability applications. This JFET is available in a through-hole package that measures 4.95 x 24.38 mm.

Product Specifications

Product Details

  • Part Number
    2N5115E3
  • Manufacturer
    Microchip Technology
  • Description
    6 V P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    6 V
  • Continous Drain Current
    -15 to -60 mA
  • Drain Source Breakdown Voltage
    30 V
  • Drain Source Resistance
    100 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    500 pA
  • Power Dissipation
    0.5 W
  • Qualification
    MIL-PRF-19500
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    25 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    8 ns
  • Rise Time
    20 ns
  • RoHS Compliant
    Yes
  • Dimension
    4.95 x 24.38 mm

Technical Documents
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