1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Junction Field Effect Transistors
  5. Microchip Technology
  6. MQ2N5115

MQ2N5115

Junction Field Effect Transistor (JFET) by Microchip Technology (17 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Microchip Technology.

MQ2N5115 Image

The MQ2N5115 from Microchip Technology is a P-Channel Junction Field Effect Transistor. It has a gate-source breakdown voltage of over 30 V and a drain-source on-resistance of up to 100 ohms. This JFET transistor is military screened to JANTXV equivalent for high-reliability applications. It is available in a through-hole package that measures 17.02 x 4.52 mm.

Product Specifications

Product Details

  • Part Number
    MQ2N5115
  • Manufacturer
    Microchip Technology
  • Description
    30 V P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Continous Drain Current
    -15 to -60 mA
  • Drain Source Breakdown Voltage
    30 V
  • Drain Source Resistance
    100 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    500 pA
  • Power Dissipation
    0.5 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    25 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    8 ns
  • Rise Time
    20 ns
  • Dimension
    17.02 x 4.52 mm

Technical Documents
View details on the manufacturer's website
View similar products