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2N2609

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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2N2609 Image

The 2N2609 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 2.0 to 10 A, Gate Source Voltage 30 V, Power Dissipation 0.3 W, Operating Temperature -65 to 200 Degree C, Input Capacitance 30 pF. Tags: Through Hole. More details for 2N2609 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2609
  • Manufacturer
    New Jersey Semiconductor
  • Description
    30 V, P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    2.0 to 10 A
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    30 pF
  • Package Type
    Through Hole
  • Package
    TO-18

Technical Documents
View details on the manufacturer's website
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