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2N3386

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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2N3386 Image

The 2N3386 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current -15.0 to -50.0 mA, Gate Source Voltage 30 V, Drain Source Resistance 150 Ohm, Gate Current 50 mA, Gate Reverse Current 15 nA. Tags: Through Hole. More details for 2N3386 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3386
  • Manufacturer
    New Jersey Semiconductor
  • Description
    30 V, 50 mA, Silicon P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    -15.0 to -50.0 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Drain Source Resistance
    150 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    15 nA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    16 pF
  • Package Type
    Through Hole
  • Package
    TO-72
  • Application
    Analog Switches, Choppers, Commutators, Amplifiers

Technical Documents
View details on the manufacturer's website
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