The 2N5196 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 0.7 to 7 mA, Gate Source Voltage -50 V, Forward Transfer Admittance 1 to 4 mS, Gate Current 50 mA, Gate Reverse Current -20 to -50 nA. Tags: Through Hole. More details for 2N5196 can be seen below.