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2N5432

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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The 2N5432 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 150 mA, Gate Source Voltage -25 V, Forward Transfer Admittance 17 mS, Drain Source Breakdown Voltage 0.05 V, Drain Source Resistance 2 to 5 Ohm. Tags: Through Hole. More details for 2N5432 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5432
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -25 V, 100 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    150 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    -25 V
  • Forward Transfer Admittance
    17 mS
  • Drain Source Breakdown Voltage
    0.05 V
  • Drain Source Resistance
    2 to 5 Ohm
  • Gate Current
    100 mA
  • Gate Reverse Current
    -10 to -200 nA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    30 pF
  • Package Type
    Through Hole
  • Package
    TO-52
  • Fall Time
    30 ns
  • Rise Time
    4 ns
  • Application
    Analog Switches, Choppers, Sample-and-Hold, Normally "On" Switches, Current Li miters

Technical Documents
View details on the manufacturer's website
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