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2N5556

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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2N5556 Image

The 2N5556 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 0.5 to 2.5 mA, Gate Source Voltage 0.2 to 4.0 V, Drain Source Breakdown Voltage 25 V, Input Capacitance 6.0 pF. Tags: Through Hole. More details for 2N5556 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5556
  • Manufacturer
    New Jersey Semiconductor
  • Description
    0.2 to 4.0 V, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    0.5 to 2.5 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    0.2 to 4.0 V
  • Drain Source Breakdown Voltage
    25 V
  • Input Capacitance
    6.0 pF
  • Package Type
    Through Hole
  • Package
    TO-72

Technical Documents
View details on the manufacturer's website
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