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2N5669

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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The 2N5669 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 4 to 10 mA, Gate Source Voltage 25 V, Forward Transfer Admittance 1.6 mS, Continous Drain Current 10 nA, Gate Current 10 µA. Tags: Through Hole. More details for 2N5669 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5669
  • Manufacturer
    New Jersey Semiconductor
  • Description
    25 V, 10 μA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    4 to 10 mA
  • Number of Channel
    Dual
  • Gate Source Voltage
    25 V
  • Forward Transfer Admittance
    1.6 mS
  • Continous Drain Current
    10 nA
  • Gate Current
    10 µA
  • Gate Reverse Current
    2 nA
  • Input Capacitance
    7 pF
  • Noise Figure
    2.5 dB
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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