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2N5912

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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The 2N5912 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 7 to 40 mA, Gate Source Voltage -0.3 to -4 V, Forward Transfer Admittance 5 to 10 mS, Gate Current 50 mA, Gate Reverse Current -2 to -250 nA. Tags: Through Hole. More details for 2N5912 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5912
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -0.3 to -4 V, 50 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    7 to 40 mA
  • Number of Channel
    Dual
  • Gate Source Voltage
    -0.3 to -4 V
  • Forward Transfer Admittance
    5 to 10 mS
  • Gate Current
    50 mA
  • Gate Reverse Current
    -2 to -250 nA
  • Power Dissipation
    0.5 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    5 pF
  • Noise Figure
    1 dB
  • Package Type
    Through Hole
  • Package
    TO-78
  • Application
    Wideband Differential Amps, High-Speed, Temp-Compensated, Single-Ended Input Amps, High Speed Comparators, Impedance Converters

Technical Documents
View details on the manufacturer's website
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