The BF245B from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 6 to 15 mA, Gate Source Voltage 1.6 to 3.8 V, Forward Transfer Admittance 3.0 to 6.5 mS, Continous Drain Current 25 mA, Drain Source Breakdown Voltage ±30 V. Tags: Through Hole. More details for BF245B can be seen below.
