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BFW11

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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BFW11 Image

The BFW11 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 1.25 to 4 V, Forward Transfer Admittance 3.0 to 6.5 mS, Continous Drain Current 4 to 10 mA, Drain Source Breakdown Voltage 30 V, Gate Current 10 mA. Tags: Through Hole. More details for BFW11 can be seen below.

Product Specifications

Product Details

  • Part Number
    BFW11
  • Manufacturer
    New Jersey Semiconductor
  • Description
    1.25 to 4 V, 10 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    1.25 to 4 V
  • Forward Transfer Admittance
    3.0 to 6.5 mS
  • Continous Drain Current
    4 to 10 mA
  • Drain Source Breakdown Voltage
    30 V
  • Gate Current
    10 mA
  • Gate Reverse Current
    0.1 nA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -65 to 150 Degree C
  • Input Capacitance
    5.0 pF
  • Noise Figure
    2.5 dB
  • Package Type
    Through Hole
  • Package
    TO-72

Technical Documents
View details on the manufacturer's website
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