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BF245

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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The BF245 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 2.0 to 6.5 mA, Gate Source Voltage 0.4 to 2.2 V, Forward Transfer Admittance 3.0 to 6.5 mS, Continous Drain Current 25 mA, Drain Source Breakdown Voltage ±30 V. Tags: Through Hole. More details for BF245 can be seen below.

Product Specifications

Product Details

  • Part Number
    BF245
  • Manufacturer
    New Jersey Semiconductor
  • Description
    0.4 to 2.2 V, 10 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    2.0 to 6.5 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    0.4 to 2.2 V
  • Forward Transfer Admittance
    3.0 to 6.5 mS
  • Continous Drain Current
    25 mA
  • Drain Source Breakdown Voltage
    ±30 V
  • Gate Current
    10 mA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -65 to 150 Degree C
  • Noise Figure
    1.5 dB
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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