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IFN860

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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IFN860 Image

The IFN860 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Gate Source Voltage -20 V, Forward Transfer Admittance 25 to 40 mS, Gate Current 50 mA, Gate Reverse Current 3 nA, Power Dissipation 0.4 W. Tags: Through Hole. More details for IFN860 can be seen below.

Product Specifications

Product Details

  • Part Number
    IFN860
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -20 V, 50 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Dual
  • Gate Source Voltage
    -20 V
  • Forward Transfer Admittance
    25 to 40 mS
  • Gate Current
    50 mA
  • Gate Reverse Current
    3 nA
  • Power Dissipation
    0.4 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    30 to 35 pF
  • Package Type
    Through Hole
  • Package
    TO-71

Technical Documents
View details on the manufacturer's website
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