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J111A

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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J111A Image

The J111A from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 20 mA, Gate Source Voltage 40 V, Continous Drain Current 20 mA, Drain Source Breakdown Voltage 40 V, Drain Source Resistance 30 Ohm. Tags: Through Hole. More details for J111A can be seen below.

Product Specifications

Product Details

  • Part Number
    J111A
  • Manufacturer
    New Jersey Semiconductor
  • Description
    40 V, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    20 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    40 V
  • Continous Drain Current
    20 mA
  • Drain Source Breakdown Voltage
    40 V
  • Drain Source Resistance
    30 Ohm
  • Gate Reverse Current
    1 nA
  • Power Dissipation
    0.4 W
  • Operating Temperature
    -65 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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