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MMBFJ177LT1G

Junction Field Effect Transistor (JFET) by onsemi (44 more products)
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MMBFJ177LT1G Image

The MMBFJ177LT1G from onsemi is a Junction Field Effect Transistor (JFET) with Drain Saturation Current -1.5 to -20 mA, Gate Source Voltage 25 V, Drain Source Resistance 300 Ohm, Gate Reverse Current 1.0 nA, Power Dissipation 0.225 W. Tags: Surface Mount. More details for MMBFJ177LT1G can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBFJ177LT1G
  • Manufacturer
    onsemi
  • Description
    25 V, , P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    -1.5 to -20 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    25 V
  • Drain Source Resistance
    300 Ohm
  • Gate Reverse Current
    1.0 nA
  • Power Dissipation
    0.225 W
  • Qualification
    AEC-Q101
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    11 pF
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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