The UJ4N075004L8S from Qorvo is a SiC Junction Field-Effect Transistor that is designed to meet demanding power applications. It has a source-drain voltage of 750 V and a gate-source voltage of -30 to 30 V. This normally-on SiC junction field effect transistor (JFET) has a power dissipation of less than 1153 W and an on-resistance of 4.3 mΩ. It can operate at temperatures up to 175°C and includes a silver-sintered die attach for excellent thermal resistance.   

This JFET has a robust device technology capable of the high-energy switching required in circuit protection applications. It offers short circuit-rated protection and can withstand high pulse current. This RoHS-compliant JFET is available in a surface-mount package that measures 11.48 x 9.70 x 2.15 mm and is suitable for solid-state/semiconductor circuit breaker, solid-state/semiconductor relay, battery disconnect, inrush current control, and surge protection applications.