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ALD1101APAL

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ALD1101APAL Image

The ALD1101APAL from Advanced Linear Devices is a MOSFET with Continous Drain Current 0.025 to 0.04 A, Drain Source Resistance 50000 to 750000 milliohm, Drain Source Breakdown Voltage 10 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Through Hole. More details for ALD1101APAL can be seen below.

Product Specifications

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Product Details

  • Part Number
    ALD1101APAL
  • Manufacturer
    Advanced Linear Devices
  • Description
    10 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.025 to 0.04 A
  • Drain Source Resistance
    50000 to 750000 milliohm
  • Drain Source Breakdown Voltage
    10 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    Plastic Dip
  • Applications
    Precision current mirrors, Precision current sources, Analog switches, Choppers, Differential amplifier input stage, Voltage comparator, Data converters, Sample and Hold, Analog inverter

Technical Documents
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