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ESPQ10R260

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The ESPQ10R260 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -6.5 to -8.4 A, Drain Source Resistance 260 to 280 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for ESPQ10R260 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESPQ10R260
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -100 V, -6.5 to -8.4 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.5 to -8.4 A
  • Drain Source Resistance
    260 to 280 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    16.5 nC
  • Switching Speed
    4.5 to 20 ns
  • Power Dissipation
    35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 720 pF

Technical Documents
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