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STRH12P10

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STRH12P10 Image

The STRH12P10 from STMicroelectronics is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 300 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -18 to 18 V, Gate Source Threshold Voltage 1.6 to 5.2 V. Tags: Through Hole. More details for STRH12P10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STRH12P10
  • Manufacturer
    STMicroelectronics
  • Description
    100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    300 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    1.6 to 5.2 V
  • Gate Charge
    48 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-257

Technical Documents
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