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ISM80NT1-20

MOSFET by ISOCOM (59 more products)
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The ISM80NT1-20 from ISOCOM is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 0.365 to 0.690 ohm, Drain Source Breakdown Voltage 800 to 900 V, Gate Source Voltage -8 to 15 V, Gate Source Threshold Voltage 1.8 to 3.5 V. Tags: Through Hole. More details for ISM80NT1-20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM80NT1-20
  • Manufacturer
    ISOCOM
  • Description
    800 to 900 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    0.365 to 0.690 ohm
  • Drain Source Breakdown Voltage
    800 to 900 V
  • Gate Source Voltage
    -8 to 15 V
  • Gate Source Threshold Voltage
    1.8 to 3.5 V
  • Gate Charge
    35 nC
  • Switching Speed
    13 to 20 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    TO-3
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters, Solar inverters, LED Lighting power supplies
  • Note
    Input Capacitance :- 760 pF

Technical Documents
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