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KFK9B0613ZL

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The KFK9B0613ZL from Nuvoton Technology is a MOSFET with Continous Drain Current 2.5 to 5.1 A, Drain Source Resistance 41.0 to 85 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 12 V, Gate Source Threshold Voltage 1.0 to 3.0 V. Tags: Chip. More details for KFK9B0613ZL can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFK9B0613ZL
  • Manufacturer
    Nuvoton Technology
  • Description
    60 V, 2.5 to 5.1 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 to 5.1 A
  • Drain Source Resistance
    41.0 to 85 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 12 V
  • Gate Source Threshold Voltage
    1.0 to 3.0 V
  • Gate Charge
    5.0 nC
  • Switching Speed
    6.0 to 40 ns
  • Power Dissipation
    0.42 to 1.70 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 520 pF

Technical Documents
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