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ALD1106SBL

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ALD1106SBL Image

The ALD1106SBL from Advanced Linear Devices is a MOSFET with Continous Drain Current 0.003 to 0.0048 A, Drain Source Resistance 350000 to 500000 milliohm, Drain Source Breakdown Voltage 10 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for ALD1106SBL can be seen below.

Product Specifications

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Product Details

  • Part Number
    ALD1106SBL
  • Manufacturer
    Advanced Linear Devices
  • Description
    10 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    0.003 to 0.0048 A
  • Drain Source Resistance
    350000 to 500000 milliohm
  • Drain Source Breakdown Voltage
    10 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC
  • Applications
    Precision current mirrors, Precision current sources, Voltage choppers, Differential amplifier input stage, Voltage comparator, Data converters, Sample and Hold, Analog signal processing

Technical Documents
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