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ALD110908APAL

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The ALD110908APAL from Advanced Linear Devices is a MOSFET with Continous Drain Current 0.003 to 0.012 A, Drain Source Resistance 500000 milliohm, Drain Source Breakdown Voltage 10.6 V, Gate Source Voltage 10.6 V, Gate Source Threshold Voltage 0.78 to 0.82 V. Tags: Through Hole. More details for ALD110908APAL can be seen below.

Product Specifications

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Product Details

  • Part Number
    ALD110908APAL
  • Manufacturer
    Advanced Linear Devices
  • Description
    10.6 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.003 to 0.012 A
  • Drain Source Resistance
    500000 milliohm
  • Drain Source Breakdown Voltage
    10.6 V
  • Gate Source Voltage
    10.6 V
  • Gate Source Threshold Voltage
    0.78 to 0.82 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    0 to 70 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    Plastic Dip
  • Applications
    Precision current mirrors, Precision current sources, Voltage choppers, Differential amplifier input stage, Voltage comparator, Voltage bias circuits, Sample and Hold, Analog inverter, Level shifters, Source followers and buffers, Current multipliers, Ana

Technical Documents
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