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DI080N06PQ

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The DI080N06PQ from Diotec Semiconductor is a MOSFET with Continous Drain Current 105 A, Drain Source Resistance 2.4 to 4.5 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for DI080N06PQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DI080N06PQ
  • Manufacturer
    Diotec Semiconductor
  • Description
    65 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    105 A
  • Drain Source Resistance
    2.4 to 4.5 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    78.5 nC
  • Power Dissipation
    65.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    DC/DC converter, Power supplies, DC drives, Synchronous rectifiers, Commercial/Industrial grade

Technical Documents
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