The AP10NA8R4MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 14.2 to 66.5 A, Drain Source Resistance 8.4 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP10NA8R4MT can be seen below.