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AP10P067YT

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The AP10P067YT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -4 to -14.4 A, Drain Source Resistance 67 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -4 V. Tags: Surface Mount. More details for AP10P067YT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP10P067YT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -100 V, -4 to -14.4 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4 to -14.4 A
  • Drain Source Resistance
    67 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -4 V
  • Gate Charge
    25 to 40 nC
  • Switching Speed
    9 to 53 ns
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-3x3
  • Note
    Input Capacitance :- 1792 pF
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