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AP15NA7R4CDT

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The AP15NA7R4CDT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 15.6 to 120 A, Drain Source Resistance 7.4 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP15NA7R4CDT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP15NA7R4CDT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    150 V, 15.6 to 120 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15.6 to 120 A
  • Drain Source Resistance
    7.4 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    91 to 146 nC
  • Switching Speed
    23 to 102 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5x6-FL
  • Note
    Input Capacitance :- 7120 pF
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