AP2622GY-HF

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP2622GY-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 410 to 520 mA, Drain Source Resistance 1.8 to 3.2 milli-ohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP2622GY-HF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP2622GY-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    50 V, 410 to 520 mA, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    410 to 520 mA
  • Drain Source Resistance
    1.8 to 3.2 milli-ohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    1 to 1.6 nC
  • Switching Speed
    12 to 56 ns
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Note
    Input Capacitance :- 50 pF

Latest MOSFETs

View more products