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AP2900EC4

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The AP2900EC4 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 15 to 30 milli-ohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Charge 18 nC. Tags: Surface Mount. More details for AP2900EC4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2900EC4
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    24 V, 9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    15 to 30 milli-ohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    18 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
View details on the manufacturer's website
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