1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Advanced Power Electronics Corp
  6. AP2N030EN

AP2N030EN

Request Quote

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP2N030EN from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 4.3 to 5.3 A, Drain Source Resistance 30 to 50 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.25 V. Tags: Surface Mount. More details for AP2N030EN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP2N030EN
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    20 V , 4.3 to 5.3 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.3 to 5.3 A
  • Drain Source Resistance
    30 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.25 V
  • Gate Charge
    6.5 to 10.4 nC
  • Switching Speed
    3 to 17 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23S
  • Note
    Input Capacitance :- 832 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products