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IRFM360

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IRFM360 Image

The IRFM360 from TT Electronics is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 200 to 230 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFM360 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFM360
  • Manufacturer
    TT Electronics
  • Description
    400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    1
  • Number of Channels
    Single
  • Continous Drain Current
    23 A
  • Drain Source Resistance
    200 to 230 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    210 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254AA
  • Applications
    Designed For Switching, Power Supply, Motor Control and Amplifier Applications, Aerospace

Technical Documents
View details on the manufacturer's website
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