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AP2P020YT

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The AP2P020YT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -8.1 to -10.2 A, Drain Source Resistance 20 to 35 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.25 to -1 V. Tags: Surface Mount. More details for AP2P020YT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2P020YT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    3.12 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.1 to -10.2 A
  • Drain Source Resistance
    20 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.25 to -1 V
  • Gate Charge
    25 to 40 nC
  • Switching Speed
    10 to 100 ns
  • Power Dissipation
    3.12 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-3x3
  • Note
    Input Capacitance :- 3600 pF
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