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AP2P028EN2

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The AP2P028EN2 from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -6 to -7.5 A, Drain Source Resistance 28 to 50 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.3 to -1 V. Tags: Surface Mount. More details for AP2P028EN2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP2P028EN2
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    2.4 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 to -7.5 A
  • Drain Source Resistance
    28 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.3 to -1 V
  • Gate Charge
    18 to 28.8 nC
  • Switching Speed
    38 to 450 ns
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN-2x2
  • Note
    Input Capacitance :- 2600 pF
View details on the manufacturer's website
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