JSM600P10MS

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The JSM600P10MS from JSMicro Semiconductor is a MOSFET with Continous Drain Current -1.4 to -1.8 A, Drain Source Resistance 165 to 230 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for JSM600P10MS can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM600P10MS
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -100 V, -1.4 to -1.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.4 to -1.8 A
  • Drain Source Resistance
    165 to 230 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    20 to 40 nC
  • Switching Speed
    8 to 200 ns
  • Power Dissipation
    2.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Note
    Input Capacitance :- 2200 pF

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