1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Advanced Power Electronics Corp
  6. AP3N1R8MT

AP3N1R8MT

Request Quote

Note : Your request will be directed to Advanced Power Electronics Corp.

The AP3N1R8MT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 32.5 to 40.6 A, Drain Source Resistance 1.89 to 3.6 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AP3N1R8MT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AP3N1R8MT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 32.5 to 40.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32.5 to 40.6 A
  • Drain Source Resistance
    1.89 to 3.6 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    38 to 60 nC
  • Switching Speed
    12 to 52 ns
  • Power Dissipation
    83.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-5x6
  • Note
    Input Capacitance :- 4850 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products