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AP3NA4R2AYT

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The AP3NA4R2AYT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 16.7 to 66 A, Drain Source Resistance 4.2 to 7.8 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for AP3NA4R2AYT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3NA4R2AYT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    30 V, 16.7 to 66 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16.7 to 66 A
  • Drain Source Resistance
    4.2 to 7.8 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    38 to 60.8 nC
  • Switching Speed
    9.5 to 57 ns
  • Power Dissipation
    31.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-3x3
  • Note
    Input Capacitance :- 2576 pF
View details on the manufacturer's website
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