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AP3P021H

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The AP3P021H from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -18.1 to -28.6 A, Drain Source Resistance 21 to 42 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for AP3P021H can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP3P021H
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -30 V, -18.1 to -28.6 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18.1 to -28.6 A
  • Drain Source Resistance
    21 to 42 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    9 to 14.4 nC
  • Switching Speed
    10 to 61 ns
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Note
    Input Capacitance :- 1520 pF
View details on the manufacturer's website
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