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AP4P013EI

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The AP4P013EI from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current -28.2 to -40 A, Drain Source Resistance 14.5 to 20 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Through Hole. More details for AP4P013EI can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP4P013EI
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    -40 V, -28.2 to -40 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -28.2 to -40 A
  • Drain Source Resistance
    14.5 to 20 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    89 to 142 nC
  • Switching Speed
    53 to 665 ns
  • Power Dissipation
    37.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM
  • Note
    Input Capacitance :- 7360 pF
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