1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK4P55D

TK4P55D

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK4P55D Image

The TK4P55D from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1500 to 1880 Milliohm, Drain Source Breakdown Voltage 550 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.4 to 4.4 V. Tags: Surface Mount. More details for TK4P55D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK4P55D
  • Manufacturer
    Toshiba
  • Description
    550 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1500 to 1880 Milliohm
  • Drain Source Breakdown Voltage
    550 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.4 to 4.4 V
  • Gate Charge
    11 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products