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SiHU3N50DA-GE3

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The SiHU3N50DA-GE3 from Vishay is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 2600 to 3200 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for SiHU3N50DA-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHU3N50DA-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 6 to 12 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    2600 to 3200 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    6 to 12 nC
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    IPAK (TO-251)
  • Applications
    Consumer electronics - Displays (LCD or plasma TV), Server and telecom power supplies - SMPS, Industrial - Welding - Induction heating - Motor drives, Battery chargers

Technical Documents
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