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AP65AN470I

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The AP65AN470I from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 0.47 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for AP65AN470I can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP65AN470I
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    650 V, 41.6 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 A
  • Drain Source Resistance
    0.47 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    68 to 109 nC
  • Switching Speed
    47 to 410 ns
  • Power Dissipation
    41.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM
  • Note
    Input Capacitance :- 5376 pF
View details on the manufacturer's website
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