1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTE115P10KH8-0-T6-G

MTE115P10KH8-0-T6-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTE115P10KH8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -2.7 A, Drain Source Resistance 95 to 124 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for MTE115P10KH8-0-T6-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTE115P10KH8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -100 V, -2.7 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.7 A
  • Drain Source Resistance
    95 to 124 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    16 nC
  • Switching Speed
    11 to 40 ns
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 960 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products