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AP9465GEM-HF

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The AP9465GEM-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 6.3 to 7.8 A, Drain Source Resistance 25 to 32 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.8 to 2.5 V. Tags: Surface Mount. More details for AP9465GEM-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP9465GEM-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    40 V, 6.3 to 7.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.3 to 7.8 A
  • Drain Source Resistance
    25 to 32 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.8 to 2.5 V
  • Gate Charge
    8.5 to 14 nC
  • Switching Speed
    4.5 to 20.5 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Note
    Input Capacitance :- 980 pF
View details on the manufacturer's website
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