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AOGT66909

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The AOGT66909 from Alpha & Omega Semiconductor is a MOSFET with Continous Drain Current 46 to 366 A, Drain Source Resistance 1.25 to 2.6 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 2.4 to 3.4 V. Tags: Surface Mount. More details for AOGT66909 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOGT66909
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    100 V, 46 to 366 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    46 to 366 A
  • Drain Source Resistance
    1.25 to 2.6 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    2.4 to 3.4 V
  • Gate Charge
    138 to 220 nC
  • Power Dissipation
    7 to 428 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Motor Driver, Battery Manangement

Technical Documents
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