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FJ4B01110L

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The FJ4B01110L from Panasonic Corporation is a MOSFET with Continous Drain Current -2.6 A, Drain Source Resistance 118 to 597 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Chip. More details for FJ4B01110L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FJ4B01110L
  • Manufacturer
    Panasonic Corporation
  • Description
    -12 V, P-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    P-Channel Depletion Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.6 A
  • Drain Source Resistance
    118 to 597 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    3.3 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -40 to 85 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    General Switching

Technical Documents
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