The UJ4SC075005L8S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET that is ideal for solid state relays and circuit-breakers, line rectification, and active-bridge rectification circuits in AC/DC front-ends, EV charging, PV inverters, switch mode power supplies (SMPS), power factor correction modules, motor drives, and induction heating applications. It has a drain-source breakdown voltage of over 750 V, a gate threshold voltage of up to 6 V, and a drain-source on-resistance of 5.4 milli-ohms. This SiC MOSFET has a continuous drain current of up to 120 A and a power dissipation of less than 1153 W. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

This MOSFET offers standard gate-drive characteristics that allow the use of off-the-shelf gate drivers, hence requiring minimal re-design when replacing Si IGBTs, Si super-junction devices, or SiC MOSFETs. It has low intrinsic capacitance, ultra-low gate charge, exceptional reverse recovery characteristics, faster switching, and clean gate waveforms. This RoHS-compliant SiC MOSFET is available in a surface mount package.